A field effect transistor is a semiconductor component that uses carriers to achieve conduction, and a semiconductor component that uses an input voltage to adjust the output current of the tube according to the magnetic effect of the current, also known as a field effect transistor.

Classification of field effect transistors

Field effect transistors are of junction type and insulated gate type. The knot type mainly has 2 PNs. The insulated gate type is mainly that the gate is insulated from others. At present, MOS field effect transistors (classified as insulated gate type) are used more.

The basic parameters of the field effect tube

1. Saturated drain-source current.

2. Pinch off voltage.

3. Turn on the voltage.

4. Transconductance.

5. Drain-source breakdown voltage.

6. Dissipated power.

7. Drain-source current.

The role of field effect transistors

1. The amplification effect of the FET, the capacity of the coupling capacitor is small, and the input impedance of the amplifier is very high.

2. The impedance transformation effect of the FET on the amplifier.

3. Field effect transistors can actually be used for variable resistors.

4. The FET can be easily used as a constant current source.

5. Field effect transistors can be used for electronic switches.

Comparison of field effect tube and transistor

(1) FET and transistor According to the relationship between current and voltage, for the signal source, the current is less, then the FET is more suitable, if the voltage is lower and the current is more, the transistor is more suitable.

(2) The FET is a unipolar element, and the unipolar element is a bipolar element. Field effect transistors use majority carriers to conduct electricity, and transistors use both majority and minority carriers to conduct electricity.

(3) The flexibility of the FET is better than that of the transistor.

(4) The current and voltage that the FET depends on can be very low.

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