Field effect transistors are conducted by majority carriers, also known as unipolar transistors. They are voltage-controlled semiconductor devices with high input resistance, low noise, low power consumption, large dynamic range, easy integration, and no secondary breakdown. Phenomenon, wide safe working area, good thermal stability and other advantages are widely used in the electronics industry, so what is the noun comparison of field effect transistors?

Idss — Saturation drain-source current. It refers to the drain-source current when the gate voltage UGS=0 in a junction or depletion IGBT.

Up — pinch-off voltage. It refers to the gate voltage when the drain and source are just turned off in the junction or depletion IGBT.

Ut — Turn-on voltage. It refers to the gate voltage when the drain and source are just turned on in the enhanced insulated gate field effect transistor.

gM — transconductance. It represents the gate-source voltage UGS — the ability to control the drain current ID, that is, the ratio of the change of the drain current ID to the change of the gate-source voltage UGS. gM is an important parameter to measure the amplification ability of the FET.

BVDS - drain-source breakdown voltage. It refers to the drain-source voltage that the FET can withstand when the gate-source voltage UGS is constant. This is a limit parameter, and the working voltage applied to the FET must be less than BVDS.

PDSM — Dissipated power, which is also a limit parameter, refers to the allowable drain-source dissipation power when the performance of the FET does not deteriorate. When used, the actual power consumption of the FET should be less than that of PDSM with a certain margin.

IDSM — drain-source current. It is a limit parameter, which refers to the current that is allowed to pass between the drain and source when the FET is working normally. The working current of the FET should not exceed IDSM

Cds---drain-source capacitance

Cdu---Drain-Substrate Capacitance

Cgd---gate-drain capacitance

Cgs---Drain-Source Capacitance

Ciss---Gate short-circuit common-source input capacitor

Coss---Gate short-circuit common-source output capacitor

Crss---Gate short-circuit common-source reverse transfer capacitance

D---Duty ratio (duty factor, external circuit parameters)

di/dt---current rate of rise (external circuit parameters)

dv/dt---voltage rise rate (external circuit parameters)

ID---Drain current (DC)

IDM---Drain pulse current

ID(on)---on-state drain current

IDQ---quiescent drain current (RF power tube)

IDS---Drain-source current

IDSM---Drain-source current

IDSS---Drain current when gate-source short circuit

IDS(sat)---channel saturation current (drain-source saturation current)

IG---Gate current (DC)

IGF---forward gate current

IGR---reverse gate current

IGDO---When the source is open, the gate current is cut off

IGSO---When the drain is open, the gate current is cut off

IGM---gate pulse current

IGP---gate peak current

IF---diode forward current

IGSS---Cut off gate current when the drain is shorted

IDSS1---Drain-source saturation current of the tube

IDSS2---Drain-source saturation current of the second tube of the tube

Iu---substrate current

Ipr---current pulse peak value (external circuit parameters)

gfs---forward transconductance

Gp---power gain

Gps---Common source mid and high frequency power gain

GpG---common gate mid and high frequency power gain

GPD---common drain mid and high frequency power gain

ggd---gate-drain conductance

gds---drain-source conductance

K---Temperature coefficient of offset voltage

Ku---transfer coefficient

L---Load inductance (external circuit parameters)

LD---Drain inductance

Ls---source inductance

rDS---Drain-source resistance

rDS(on)---Drain-source on-state resistance

rDS(of)---Drain-source off-state resistance

rGD--- gate-drain resistance

rGS---gate-source resistance

Rg--- external gate resistance (external circuit parameters)

RL---Load resistance (external circuit parameters)

R(th)jc---junction-to-case thermal resistance

R(th)ja---junction-to-ring thermal resistance

PD---Drain dissipated power

PDM---Drain allows to dissipate power

PIN--input power

POUT---output power

PPK---pulse power peak value (external circuit parameters)

to(on)---open delay time

td(off)---turn off delay time

ti---rise time

ton---opening time

toff---off time

tf---fall time

trr---reverse recovery time

Tj---junction temperature

Tjm---Allowable junction temperature

Ta---ambient temperature

Tc---shell temperature

Tstg---Storage temperature

VDS---Drain-source voltage (DC)

VGS---gate-source voltage (DC)

VGSF--forward gate-source voltage (DC)

VGSR---reverse gate-source voltage (DC)

VDD---Drain (DC) power supply voltage (external circuit parameters)

VGG---gate (DC) power supply voltage (external circuit parameters)

Vss---source (DC) power supply voltage (external circuit parameters)

VGS(th)---open voltage or valve voltage

V(BR)DSS---Drain-source breakdown voltage

V(BR)GSS---Gate-source breakdown voltage when drain-source short circuit

VDS(on)---Drain-source on-state voltage

VDS(sat)---Drain-source saturation voltage

VGD---gate-drain voltage (DC)

Vsu---source substrate voltage (DC)

VDu---Drain substrate voltage (DC)

VGu---gate-substrate voltage (DC)

Zo---Internal resistance of driving source

η---Drain efficiency (RF power tube)

Vn---noise voltage

aID---Temperature coefficient of drain current

ards---Temperature coefficient of drain-source resistance

Shenzhen Baiyuxin Technology has the advantages of supplying: low voltage field effect MOS tube (10V-200V), medium and high voltage field effect MOS tube (200V-1200V), medium and low voltage field effect MOS tube (10V-500V), separate stand effect MOS tube, super The biggest advantage of supplying a full range of field effect MOS transistors, such as junction field effect MOS transistors , Shenzhen Baiyuxin Technology Co., Ltd.