The reasons for the failure of the MOS tube are as follows:

1: Avalanche failure (voltage failure), that is, we often say that the BVdss voltage between the drain and the source exceeds the rated voltage of the MOSFET, and exceeds a certain capacity, causing the MOSFET to fail.

2: SOA failure (current failure), which not only causes failure beyond the safe working area of MOSFET, but is divided into failure due to Id exceeding the device specification and failure due to excessive Id and high loss caused by the long-term heat accumulation of the device.

3: Body diode failure: In bridge, LLC and other topologies that use the body diode for freewheeling, the failure is caused by the destruction of the body diode.

4: Resonance failure: In the process of parallel use, the gate and circuit parasitic parameters lead to failure caused by vibration.

5: Electrostatic failure: In autumn and winter, the device fails due to the static electricity of the human body and equipment.

6: Gate voltage failure: The gate oxide layer fails due to abnormal voltage spikes on the gate.

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