The English abbreviation of field effect transistor is FET, and the Chinese abbreviation is field effect transistor or unipolar transistor. It is a voltage-controlled semiconductor device with an input resistance between 108Ω and 109Ω (high input resistance), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, and safe operating range. Wide and other advantages, the current field effect transistor has become a strong competitor of bipolar transistors and power transistors. Field effect transistors are mainly divided into large categories: junction field effect transistors and insulated gate field effect transistors (mos tubes).

FET is not equal to MOS tube, MOS tube is just a type of FET; and FET is just a type of transistor, which is divided into unipolar and bipolar transistors; how to distinguish it, please see below 's introduction.

Compared with bipolar transistors, FETs:

(1) In the field effect transistor, the conduction process is the drift motion of the majority carriers, so it is called a unipolar transistor; in a bipolar transistor, there are both the diffusion motion of the majority carrier and the drift motion of the minority carrier.

(2) The FET controls the drain current iD through the gate voltage uGS, which is called a voltage control device; the bipolar transistor uses the base current iB (or the emitter current iE) to control the collector current iC, called for the current control device.

(3) The input resistance of the FET is large; the input resistance of the transistor is small.

(4) The value of the transconductance gm of the FET is small, and the β value of the bipolar transistor is large. Under the same conditions, the amplification capability of the FET is not as high as that of the transistor.

(5) The drain and source of the junction field effect transistor can be used interchangeably. If the substrate of the MOS tube is not connected to the source, the d and s electrodes can also be used interchangeably; The e-pole swap is called the inverted working state, and β will become very small at this time.

(6) FETs can be used as voltage-controlled resistors.

(7) The FET relies on multi-sub conduction, so it has better temperature stability, radiation resistance and lower noise.

There are also some disadvantages of FETs: such as low power and slow speed. But because of its simple process and easy integration, it is widely used in integrated circuits.

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