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2022-09-24 13:04:29
BUK7880-55 SOT223 NXP MOS (Field Effect Transistor)
BUK7880-55 SOT223 NXP MOS (Field Effect Transistor)
Category: Discrete SemiconductorsTransistors - FETs, MOSFETs - Single
Manufacturer: NXP USA Inc.
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current at 25°C - Continuous Drain (Id): 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
On-resistance (max) at different Id, Vgs: 80 milliohms @ 5A, 10V
Vgs(th) (max) at different Ids: 4V @ 1mA
Vgs (max): ±16V
Power Dissipation (Max): 1.8W (Ta)
Operating temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package/Enclosure: TO-261-4, TO-261AA
Drain-Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) at Vds (max): 500 pF @ 25 V