(Model; SKY77643-11 in stock)

The module includes WCDMA/LTE modules for low, high and mid-band, function control (MFC) blocks, and RF input/output ports are internally loaded with 50Ω to minimize external components. CMOS integrated circuits utilize standard MIPI® for internal MFC interface and operational control. Extremely low leakage current maximizes handset standby time. InGaP chips, silicon chips and passive components are mounted on a multilayer laminate substrate. The component is packaged in a 4.0mm x 6.8mm x 0.8mm, 42-pad MCM, SMT package for a highly manufacturable, low-cost solution.

3G: SKY77643-11 SkyLiTE ? Supports WCDMA, High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), High Speed Packet Access (HSPA+) and TD-SCDMA modulation. Varying the input power level provides control of the output power. Use a DCDC converter to adjust V CC maximum efficiency for each power level and modulation type.

4G: SKY77643-11 SkyLiTE ? Support 1.4, 3, 5, 10, 15, 20 MHz channel bandwidth. Similar to 3G operation, changing the input power level can control the output power. Adjusting V with DCDC converters maximizes the efficiency energy rating of each converter.

3G/4G modulation schemes include:

WCDMA Voice Release 99

HSDPA category

HSUPA

-HSPA+

TD-SCDMA

LTE 1.4, 3, 5, 10, 15, 20 MHz channel bandwidth

TDD LTE

feature

Hybrid Power Amplifier Architecture

Two T/R (RX) ports

14 RF outputs

Industry leading 3G/4G PAE

Optimized for APT DCDC operation

Fully programmable mobile industry

Processor Interface (MIPI?) Control

MIPI ? Programmable Bias Mode Optimization

Best efficiency/linearity tradeoff for 3G and 4G; minimize DG09 to 3G.

Package:

4.0mm x 6.8mm x 0.8mm, max

42 pad configuration

Application field

Multi-band 3G/LTE mobile phone

WCDMA Bands I, II, III, IV, V, VIII, IX

TD-SCDMA frequency band 34, 39

FDD LTE bands