NCE8205_NCE60P20K Guide

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

NCE8205_NCE60P20K

NCE30H12K

NCEB301G NCE3065G NCE30H14K NCE3095K NCE3065Q.

NCE75T60T NCE80TD60BT NCE80TD60BP NCE60TD65BP NCE60TD65BT.

NCE80TD65BT NCE80TD65BP NCE60TD120UT NCE75TD120BT NCE75TD120VT.

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

NCE8205_NCE60P20K

NCEP039N10

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

KIA Semiconductor has always implemented a total quality management system, which is to track and monitor the quality of all products from the chip design to the customer's use.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

Main parameters of MOS tube 3306 products Drain-source voltage: 60V Gate-source voltage: ±25V Continuous leakage current: 80A/60A Pulse leakage current: 300A Avalanche current: 21.5A Avalanche energy: 462.25MJ.

NCE8205_NCE60P20K

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

relevant information