RTL8188RE-GR_TLV70233DBVR Introduction

Kim Wong, vice president and general manager of TI's High-Speed Data and Clocking Group, said: "The clocking requirements for future communications infrastructures will far exceed the device performance of current quartz crystal resonators. By integrating TI's BAW resonators directly into clocking devices , we can achieve ultra-low jitter performance and resiliency to meet the increasingly stringent requirements for data pipeline resistance to vibration and shock in the process of communication transformation.”

Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity. In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity.

RTL8188RE-GR_TLV70233DBVR

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Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .

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In this case, BAW resonator technology offers TI a huge advantage by eliminating the need for external components mounted on the PCB. Today, timing often requires a quartz crystal. "Everyone uses quartz crystals for clocks," Solis said.

RTL8188RE-GR_TLV70233DBVR

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When asked why nobody in the industry has built something like a BAW resonator, Upton said, "It's very difficult to develop. But it's not easy to convert electrical energy into mechanical acoustics while keeping the signal stable and robust within a clean clock." TI has been involved in MEMS research for many years.

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"The new BAW resonator technology is important because TI is integrating it into its silicon products, reducing design time, solution size and component cost," said Philip Solis, research director for connectivity and smartphone semiconductors at IDC.

The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, the first layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most of the wave will be reflected back and superimposed with the original wave. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.

RTL8188RE-GR_TLV70233DBVR

Compared with BAW-SMR, a smaller part of the membrane type is in contact with the underlying substrate, which is not easy to dissipate heat. However, the thin film structure needs to be strong enough to be unaffected by subsequent processes.

In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.

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