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2022-09-24 12:35:29
TPS613221ADBVR
TPS613221ADBVR_BLM31SN500SZ1L Introduction
Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity. In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity.
Also, for analog use, the ROI of a 300mm fab is likely to be higher because it can last 20 to 30 years. TI has been steadily ramping up its production of analog chips on 300mm wafers in recent years to cut costs and increase productivity. TI said the 300mm fab yields 40% cheaper chips than the 200mm process used by competitors.
TPS613221ADBVR_BLM31SN500SZ1L
LD1117DT50CTR
So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.
In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones.
Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .
TMP112AIDRLR TS3A225ERTER TPS2546RTER TMP112AIDRLT TPS82130SILR.
TPS613221ADBVR_BLM31SN500SZ1L
DAC128S085CIMTX/NOPB Chip Diode
TPS630701RNMT TPS630702RNMR TPS54218RTER TPS92692PWPR TPS56C230RJER.
TPS63060DSCR TPS63030DSKR TPS63060DSCT TPS63070RNMR TPS630701RNMR.
The technology, which also enables high-precision and robust communication between IoT devices, can now be developed in a less bulky form, said Kim Wong, vice president of high-speed data and clocking at TI.
The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, the first layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most of the wave will be reflected back and superimposed with the original wave. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.
TPS613221ADBVR_BLM31SN500SZ1L
??Membrane Type is etched from the back of the substrate to the surface (that is, the bottom electrode surface) to form a suspended thin film and a cavity. ?? There is also a method called FBAR (Film Bulk Acoustic Resonator), including Membrane type and Airgap type. .
The particles in the solid vibrate in an elliptical trajectory, and the long axis of the ellipse is perpendicular to the surface of the solid. For SAW, also called Rayleighsurface wave, there are both longitudinal waves and transverse waves. .
relevant information
