ISL99227BFRZ-T_GCJ216R71H222KA01D Introduction

Texas Instruments (TI) said it will close its last two 150mm (6-inch) wafer fabs in the next few years while building its next 300mm (12-inch) fab at its Richardson, Texas, fab. "This will be a multi-year program that is expected to be completed no later than 2023 to 2025," Dave Pahl, head of investor relations at Texas Instruments, said on the conference call.

With crystal oscillation, precise rhythm is achieved. But when these expensive crystals wear out, they can vibrate or jump, affecting the accuracy of timekeeping.

ISL99227BFRZ-T_GCJ216R71H222KA01D

TPS62143RGTR Other ICs

TMP112AIDRLR TS3A225ERTER TPS2546RTER TMP112AIDRLT TPS82130SILR.

SN74HCS74QPWRQ1 BQ27200EVM TPD8F003DQDR LMC6082AIN/NOPB.

In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones.

So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.

ISL99227BFRZ-T_GCJ216R71H222KA01D

DRV5053OAQDBZR

"The new BAW resonator technology is important because TI is integrating it into its silicon products, reducing design time, solution size and component cost," said Philip Solis, research director for connectivity and smartphone semiconductors at IDC.

TPS630701RNMT TPS630702RNMR TPS54218RTER TPS92692PWPR TPS56C230RJER.

UCC28063DR LM536003QDSXRQ1 UCC2892DR MSP430FR2111IPW16R UCC21520QDWRQ1.

TPS54310PWPR TPA3116D2DADR LM3429MHX/NOPB DP83867CRRGZT TPS62172DSGR.

ISL99227BFRZ-T_GCJ216R71H222KA01D

In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.

The BAW filter is more suitable for frequencies above 2.5GHz. The manufacturing process of the BAW filter is also very consistent with the existing IC manufacturing process, and is suitable for overall integration with other active circuits. .

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