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2022-09-24 12:35:29
SN74HCT04DR
SN74HCT04DR_BQ30Z55DBTR-R3 Other electronic tube guide
The company currently has two 300mm fabs named RFAB and DMO56. TI outsources much of its logic and embedded IC production to foundries, but mostly produces analog chips in its own factories.
Of the roughly $1.5 billion in annual production at the two 150mm fabs, a significant portion will be moved to 300mm fabs, increasing productivity and economics, Pahl said.
SN74HCT04DR_BQ30Z55DBTR-R3 Other tubes
BLM18KG300JH1D
TPS62823DLCR TPS62823DLCT TPS62821DLCT TPS62821DLCR BQ40Z50RSMR-R2.
The most basic structure of the BAW filter is that two metal electrodes sandwich a piezoelectric film (the thickness of the Quartz substrate is 2um at 2GHz), and the acoustic wave oscillates in the piezoelectric film to form a standing wave.
In this case, BAW resonator technology offers TI a huge advantage by eliminating the need for external components mounted on the PCB. Today, timing often requires a quartz crystal. "Everyone uses quartz crystals for clocks," Solis said.
Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .
SN74HCT04DR_BQ30Z55DBTR-R3 Other tubes
TXS0104ERGYR Other passive components
LM5176PWPR LM5176PWPT DRV8876PWPR TPS23751PWPR TPS61194PWPR.
"The new BAW resonator technology is important because TI is integrating it into its silicon products, reducing design time, solution size and component cost," said Philip Solis, research director for connectivity and smartphone semiconductors at IDC.
The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, the first layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most of the wave will be reflected back and superimposed with the original wave. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.
TPS560430XFDBVR XTR117AIDGKR CSD15380F3T MSP-EXP432P401R TPS2051BDBVR.
SN74HCT04DR_BQ30Z55DBTR-R3 Other tubes
Compared with BAW-SMR, a smaller part of the membrane type is in contact with the underlying substrate, which is not easy to dissipate heat. However, the thin film structure needs to be strong enough to be unaffected by subsequent processes.
In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.
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