TLV70233DBVR Power IC_DFE322512F-R47M=P2 Guide

The company currently has two 300mm fabs named RFAB and DMO56. TI outsources much of its logic and embedded IC production to foundries, but mostly produces analog chips in its own factories.

Another product announced by TI is a network synchronizer based on BAW technology that works with a quartz crystal to reduce digital noise or jitter. Noise cancellation will bring many advantages to telecom systems such as 5G networks. These noise and jitter typically come from the input signals of the communications subsystems of the wired or wireless hardware infrastructure in the data center core network.

TLV70233DBVR Power IC_DFE322512F-R47M=P2

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In this case, BAW resonator technology offers TI a huge advantage by eliminating the need for external components mounted on the PCB. Today, timing often requires a quartz crystal. "Everyone uses quartz crystals for clocks," Solis said.

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The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, the first layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most of the wave will be reflected back and superimposed with the original wave. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.

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TLV70233DBVR Power IC_DFE322512F-R47M=P2

A suitable BAW piezoelectric material needs high electromechanical coupling coefficient, low electromechanical loss, high thermal stability, and also conforms to IC process technology. Quartz (quartz), as a common piezoelectric material, exhibits linear response under high voltage and high pressure, but there is no suitable method to make quartz into thin film deposits on Si substrates.

The typical basic structure is shown in the figure (a) above, with the piezoelectric layer sandwiched between the upper and lower metal electrodes, the corresponding mBVD equivalent circuit is shown in the figure (b) above, and the corresponding impedance is shown in the figure (c) above. It can be seen that there are two resonance frequencies, series (fs) and parallel (fp). The working principle is as shown below.

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