LM2904DGKR Universal Op Amp_GCM21A5C2E911FX01D Introduction

Texas Instruments (TI) said it will close its last two 150mm (6-inch) wafer fabs in the next few years while building its next 300mm (12-inch) fab at its Richardson, Texas, fab. "This will be a multi-year program that is expected to be completed no later than 2023 to 2025," Dave Pahl, head of investor relations at Texas Instruments, said on the conference call.

Among them, 42 150mm fabs and 24 200mm fabs were closed, while the number of closed 300mm fabs accounted for only 10% of the total. The details are shown in the figure below. According to IC Insights statistics, in the past 10 years (2009-2018), all 11-ball semiconductor manufacturers closed or rebuilt a total of 97 fabs. .

LM2904DGKR Universal op amp_GCM21A5C2E911FX01D

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So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.

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LM2904DGKR Universal op amp_GCM21A5C2E911FX01D

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. In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value. On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave.

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LM2904DGKR Universal op amp_GCM21A5C2E911FX01D

In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.

??Membrane Type is etched from the back of the substrate to the surface (that is, the bottom electrode surface) to form a suspended thin film and a cavity. ?? There is also a method called FBAR (Film Bulk Acoustic Resonator), including Membrane type and Airgap type. .

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