PCM1802DBR_GRT155R61E225KE13D Guide

The TI BAW oscillator is an electronic oscillator circuit that utilizes the piezoelectric effect to generate a stable electronic signal through the mechanical resonance of a vibrating miniature acoustic resonator (BAW). This precise high-frequency signal provides a clock and timing reference for electronic systems.

In April 2019, Texas Instruments released the construction plan for this 300mm fab, with an estimated investment of $3.1 billion. However, in view of the sluggish semiconductor market in 2019 and the unsatisfactory revenue situation, TI's plan to invest in the construction of a 300mm wafer fab in Richardson is not as smooth as originally expected, and it may be delayed for two years to complete.

PCM1802DBR_GRT155R61E225KE13D

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Texas Instruments has unveiled what the company calls "breakthrough" bulk acoustic wave (BAW) resonator technology. This enables TI to introduce the industry's first crystalless wireless MCU for the embedded market, the SimpleLink CC2652RB, with the clock contained in the same chip. At just 100 microns in size, these tiny timers are smaller than the diameter of a human hair, but they operate at much higher frequencies than quartz crystals, enabling the integration of high-precision and ultra-low jitter clocks directly into packages that contain other circuitry, TI say.

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So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.

PCM1802DBR_GRT155R61E225KE13D

NDTS0505C

. In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value. On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave.

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In short, advances in BAW technology have brought "higher performance, simpler design, lower cost and smaller size" to wired and wireless networks, Wong explained.

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PCM1802DBR_GRT155R61E225KE13D

The typical basic structure is shown in the figure (a) above, with the piezoelectric layer sandwiched between the upper and lower metal electrodes, the corresponding mBVD equivalent circuit is shown in the figure (b) above, and the corresponding impedance is shown in the figure (c) above. It can be seen that there are two resonance frequencies, series (fs) and parallel (fp). The working principle is as shown below.

In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.

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