NCE8736_NCE01P18K Introduction

The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance). The smaller the internal resistance, the larger the current (because the heat is small). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance.

As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed.

NCE8736_NCE01P18K

NCE3009S

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE75TD120WT NCE50TD120BP NCE50TH120BP NCE50TD120BT NCE50TD120VT.

NCE30H11BG NCE3095G NCE30ND09S NCE3013J NCE30ND35Q.

NCEB301G NCE3065G NCE30H14K NCE3095K NCE3065Q.

NCE8736_NCE01P18K

NCEP4090GU

General Characteristics ● V DS = 30V, ID = 95A R DS(ON) <5.1mΩ@V GS = 10V R DS(ON) <8.5mΩ@V GS = 5V ● High density battery design, ultra-low Rdson ● Fully characterised avalanche Voltage and current ● Good stability and high uniformity? AS ● Excellent package, good heat dissipation.

Main parameters of MOS tube 3306 products Drain-source voltage: 60V Gate-source voltage: ±25V Continuous leakage current: 80A/60A Pulse leakage current: 300A Avalanche current: 21.5A Avalanche energy: 462.25MJ.

NCE6080K product features VDS=60V, ID =80A RDS(ON)<8.5mΩ@VGS=10V Ultra-low RDSON high-density battery design with good stability, good uniformity, high EAS and good heat dissipation packaging.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

NCE8736_NCE01P18K

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

The lithium battery of electric vehicles can work normally, largely thanks to the lithium battery protection board.

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