DRV8701PRGER Other Passive Components_5M1270ZT144C5N Introduction

The company currently has two 300mm fabs named RFAB and DMO56. TI outsources much of its logic and embedded IC production to foundries, but mostly produces analog chips in its own factories.

Of the roughly $1.5 billion in annual production at the two 150mm fabs, a significant portion will be moved to 300mm fabs, increasing productivity and economics, Pahl said.

DRV8701PRGER Other passive components_5M1270ZT144C5N

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Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .

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"The new BAW resonator technology is important because TI is integrating it into its silicon products, reducing design time, solution size and component cost," said Philip Solis, research director for connectivity and smartphone semiconductors at IDC.

The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, the first layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most of the wave will be reflected back and superimposed with the original wave. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.

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DRV8701PRGER Other passive components_5M1270ZT144C5N

In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.

The typical basic structure is shown in the figure (a) above, with the piezoelectric layer sandwiched between the upper and lower metal electrodes, the corresponding mBVD equivalent circuit is shown in the figure (b) above, and the corresponding impedance is shown in the figure (c) above. It can be seen that there are two resonance frequencies, series (fs) and parallel (fp). The working principle is as shown below.

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