DRV8847PWR Other IC_GA355DR7GF472KW01K Guide

Kim Wong, vice president and general manager of TI's High-Speed Data and Clocking Group, said: "The clocking requirements for future communications infrastructures will far exceed the device performance of current quartz crystal resonators. By integrating TI's BAW resonators directly into clocking devices , we can achieve ultra-low jitter performance and resiliency to meet the increasingly stringent requirements for data pipeline resistance to vibration and shock in the process of communication transformation.”

Texas Instruments (TI) said it will close its last two 150mm (6-inch) wafer fabs in the next few years while building its next 300mm (12-inch) fab at its Richardson, Texas, fab. "This will be a multi-year program that is expected to be completed no later than 2023 to 2025," Dave Pahl, head of investor relations at Texas Instruments, said on the conference call.

DRV8847PWR Other IC_GA355DR7GF472KW01K

74LV595PW Logic IC

TPS22919DCKR CSD23381F4 CSD23280F3 LM76002RNPR LM76002RNPT.

TPS65131TRGERQ1 TPS73701DCQR TPS2421-2DDAR TPS61022RWUR TPS61041DBVR.

TPS62823DLCR TPS62823DLCT TPS62821DLCT TPS62821DLCR BQ40Z50RSMR-R2.

So, does this mean that 150mm wafers are gradually withdrawing from the stage of history? The answer is no, there is still a huge market space for 150mm wafers. A large number of 150mm fabs in the industry were closed, and more and more 300mm fabs were launched and gradually achieved mass production.

DRV8847PWR Other IC_GA355DR7GF472KW01K

BLM21BD272SN1L

UCC28063DR LM536003QDSXRQ1 UCC2892DR MSP430FR2111IPW16R UCC21520QDWRQ1.

TPS63060DSCR TPS63030DSKR TPS63060DSCT TPS63070RNMR TPS630701RNMR.

When asked why nobody in the industry has built something like a BAW resonator, Upton said, "It's very difficult to develop. But it's not easy to convert electrical energy into mechanical acoustics while keeping the signal stable and robust within a clean clock." TI has been involved in MEMS research for many years.

. In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value. On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave.

DRV8847PWR Other IC_GA355DR7GF472KW01K

The typical basic structure is shown in the figure (a) above, with the piezoelectric layer sandwiched between the upper and lower metal electrodes, the corresponding mBVD equivalent circuit is shown in the figure (b) above, and the corresponding impedance is shown in the figure (c) above. It can be seen that there are two resonance frequencies, series (fs) and parallel (fp). The working principle is as shown below.

The Membrane type is similar to the basic model of the BAW resonator, with air on both sides. Since the acoustic impedance of the air is much lower than that of the piezoelectric layer, most of the acoustic waves will be reflected back.

relevant information