NCE30H10G_NCEP40T15A Introduction

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

NCE30H10G_NCEP40T15A

NCE30ND07AS

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE80TD65BT NCE80TD65BP NCE60TD120UT NCE75TD120BT NCE75TD120VT.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE50TD120WT NCE40TD120T NCE40TD120BT NCE40TD120WT NCE40TD120LT.

NCE30H10G_NCEP40T15A

NCE60P04S

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

It can be used for a variety of applications. DESCRIPTION The NCE3095K uses advanced trench technology and is designed to provide excellent R DS(ON) with low gate charge.

General Characteristics ● V DS = 30V, ID = 95A R DS(ON) <5.1mΩ@V GS = 10V R DS(ON) <8.5mΩ@V GS = 5V ● High density battery design, ultra-low Rdson ● Fully characterised avalanche Voltage and current ● Good stability and high uniformity? AS ● Excellent package, good heat dissipation.

NCE30H10G_NCEP40T15A

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package. .

relevant information