AD8314ARMZ-REEL Other Passive Components_GCM31CR70J226ME23D Guide

. With the maturity and progress of the process technology and the increase in market demand, more and more companies use advanced processes below 20nm to design and produce ICs and devices, which makes more and more IDMs and foundries eliminate low-efficiency production. fab.

Among them, 42 150mm fabs and 24 200mm fabs were closed, while the number of closed 300mm fabs accounted for only 10% of the total. The details are shown in the figure below. According to IC Insights statistics, in the past 10 years (2009-2018), all 11-ball semiconductor manufacturers closed or rebuilt a total of 97 fabs. .

AD8314ARMZ-REEL Other passive components_GCM31CR70J226ME23D

74HC00D, 653 Logic IC

Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .

In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones.

TPS62823DLCR TPS62823DLCT TPS62821DLCT TPS62821DLCR BQ40Z50RSMR-R2.

TPS22919DCKR CSD23381F4 CSD23280F3 LM76002RNPR LM76002RNPT.

AD8314ARMZ-REEL Other passive components_GCM31CR70J226ME23D

SN74CB3T3257PWR Other passive components

TPS560430XFDBVR XTR117AIDGKR CSD15380F3T MSP-EXP432P401R TPS2051BDBVR.

. In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value. On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave.

TPS60403DBVR CSD17313Q2 TPS259571DSGR TPS259571DSGT TLV3202AQDGKRQ1.

DRV8876NPWPR DRV8872DDARQ1 DRV5013ADQDBZT DRV5013ADQDBZR TPD4E001DRLR.

AD8314ARMZ-REEL Other passive components_GCM31CR70J226ME23D

There are also different structures where sound waves propagate as transverse waves. In the above-mentioned BAW-SMR and FBAR?filter diagrams, sound waves propagate in the form of longitudinal waves, that is, the direction of particle vibration and the direction of wave propagation are parallel.

The Membrane type is similar to the basic model of the BAW resonator, with air on both sides. Since the acoustic impedance of the air is much lower than that of the piezoelectric layer, most of the acoustic waves will be reflected back.

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