TPS71530DCKR Ultra Small Tube_LMZ21701SILR Power IC Guide

Of the roughly $1.5 billion in annual production at the two 150mm fabs, a significant portion will be moved to 300mm fabs, increasing productivity and economics, Pahl said.

In April 2019, Texas Instruments released the construction plan for this 300mm fab, with an estimated investment of $3.1 billion. However, in view of the sluggish semiconductor market in 2019 and the unsatisfactory revenue situation, TI's plan to invest in the construction of a 300mm wafer fab in Richardson is not as smooth as originally expected, and it may be delayed for two years to complete.

TPS71530DCKR Ultra Small Tube_LMZ21701SILR Power IC

TPS62163DSGR Power IC

Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .

TPS61230ARNSR TPS613221ADBVR TPS613221ADBVT LM321LVIDBVR TPS562201DDCR.

SN74HCS74QPWRQ1 BQ27200EVM TPD8F003DQDR LMC6082AIN/NOPB.

For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones. In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: .

TPS71530DCKR Ultra Small Tube_LMZ21701SILR Power IC

GRM21BC80G476ME15L

UCC28063DR LM536003QDSXRQ1 UCC2892DR MSP430FR2111IPW16R UCC21520QDWRQ1.

TPS560430XFDBVR XTR117AIDGKR CSD15380F3T MSP-EXP432P401R TPS2051BDBVR.

"The new BAW resonator technology is important because TI is integrating it into its silicon products, reducing design time, solution size and component cost," said Philip Solis, research director for connectivity and smartphone semiconductors at IDC.

On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave. . In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value.

TPS71530DCKR Ultra Small Tube_LMZ21701SILR Power IC

However, the thin film structure needs to be strong enough to be unaffected by subsequent processes. Compared with BAW-SMR, a smaller part of the membrane type is in contact with the underlying substrate, which is not easy to dissipate heat.

?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention. In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure.

relevant information