FDC658AP MOS (Field Effect Transistor)_GRM2165C1H911JA01D Introduction

In April 2019, Texas Instruments released the construction plan for this 300mm fab, with an estimated investment of $3.1 billion. However, in view of the sluggish semiconductor market in 2019 and the unsatisfactory revenue situation, TI's plan to invest in the construction of a 300mm wafer fab in Richardson is not as smooth as originally expected, and it may be delayed for two years to complete.

”. Texas Instruments (TI) said it will close its last two 150mm (6-inch) fabs in the next few years while building its next 300mm (12-inch) fab at its Richardson, Texas fab "This will be a multi-year program that is expected to be completed no later than 2023 to 2025," Dave Pahl, head of investor relations at Texas Instruments, said on the conference call.

FDC658AP MOS (Field Effect Transistor)_GRM2165C1H911JA01D

BLM18HE102SN1D

DAC7311IDCKR TPS62260DDCR TPS62260DDCT TPS62261TDRVRQ1 TCA9544APWR.

Today, timing often requires a quartz crystal. In this case, BAW resonator technology offers TI a huge advantage by eliminating the need for external components mounted on the PCB. "Everyone uses quartz crystals for clocks," Solis said.

This enables TI to introduce the industry's first crystalless wireless MCU for the embedded market, the SimpleLink CC2652RB, with the clock contained in the same chip. Texas Instruments has unveiled what the company calls "breakthrough" bulk acoustic wave (BAW) resonator technology. At just 100 microns in size, these tiny timers are smaller than the diameter of a human hair, but they operate at much higher frequencies than quartz crystals, enabling the integration of high-precision and ultra-low jitter clocks directly into packages that contain other circuitry, TI say.

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FDC658AP MOS (Field Effect Transistor)_GRM2165C1H911JA01D

LMZ21701SILR Power IC

The technology, which also enables high-precision and robust communication between IoT devices, can now be developed in a less bulky form, said Kim Wong, vice president of high-speed data and clocking at TI.

TPS630701RNMT TPS630702RNMR TPS54218RTER TPS92692PWPR TPS56C230RJER.

On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave. . In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value.

When asked why no one in the industry has built something like a BAW resonator, Upton said, "It's very difficult to develop." TI has been involved in MEMS for years. However, converting electrical energy into mechanical acoustics while keeping the signal stable and robust within a clean clock is not easy.

FDC658AP MOS (Field Effect Transistor)_GRM2165C1H911JA01D

Only the ladder type and lattice type are briefly introduced here. The BAW filter can connect multiple resonators according to a certain topology. There are many types of BAW filters, including ladder type filter, lattice type filter, stacked crystal filter and coupled resonator filter.

Time-to-market is accelerated as designers eliminate the need to screen, calibrate and assemble external quartz crystals. . Design engineers can use this MCU to achieve simpler and smaller designs while improving performance and reducing cost. TI's new product announcement includes an industry-first crystalless wireless microprocessor (MCU) that integrates a TI BAW resonator in a package.

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