NCE4012S_NCEP6090AGU Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

NCE4012S_NCEP6090AGU

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

NCE50TD120WT NCE40TD120T NCE40TD120BT NCE40TD120WT NCE40TD120LT.

NCE4012S_NCEP6090AGU

NCEP045N10

Applications ● Power switching applications ● Hard switching and high frequency circuits ● Uninterruptible power supplies.

DESCRIPTION The NCE3095K uses advanced trench technology and is designed to provide excellent R DS(ON) with low gate charge. It can be used for a variety of applications.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

General Characteristics ● V DS = 30V, ID = 95A R DS(ON) <5.1mΩ@V GS = 10V R DS(ON) <8.5mΩ@V GS = 5V ● High density battery design, ultra-low Rdson ● Fully characterised avalanche Voltage and current ● Good stability and high uniformity? AS ● Excellent package, good heat dissipation.

NCE4012S_NCEP6090AGU

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

relevant information