AO7404 Ultra Small Tube_GCM319R71H104KA37D Introduction

TI has been steadily ramping up its production of analog chips on 300mm wafers in recent years to cut costs and increase productivity. TI said the 300mm fab yields 40% cheaper chips than the 200mm process used by competitors. Also, for analog use, the ROI of a 300mm fab is likely to be higher because it can last 20 to 30 years.

These noise and jitter typically come from the input signals of the communications subsystems of the wired or wireless hardware infrastructure in the data center core network. Another product announced by TI is a network synchronizer based on BAW technology that works with a quartz crystal to reduce digital noise or jitter. Noise cancellation will bring many advantages to telecom systems such as 5G networks.

AO7404 Ultra-small tube_GCM319R71H104KA37D

TSL2561T other sensors

TPS74801DRCR TPS22918DBVR TLV62569ADRLR TLV62569ADRLT TPS61230ARNST.

TPS65131TRGERQ1 TPS73701DCQR TPS2421-2DDAR TPS61022RWUR TPS61041DBVR.

For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones. In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: .

TPS563209DDCR TPS563209DDCT TS3USB221RSER LM339APWR MAX3232IPWR.

AO7404 Ultra-small tube_GCM319R71H104KA37D

GRM219R60G476ME44

TPS630701RNMT TPS630702RNMR TPS54218RTER TPS92692PWPR TPS56C230RJER.

When asked why no one in the industry has built something like a BAW resonator, Upton said, "It's very difficult to develop." TI has been involved in MEMS for years. However, converting electrical energy into mechanical acoustics while keeping the signal stable and robust within a clean clock is not easy.

DRV8876NPWPR DRV8872DDARQ1 DRV5013ADQDBZT DRV5013ADQDBZR TPD4E001DRLR.

On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave. . In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value.

AO7404 Ultra-small tube_GCM319R71H104KA37D

?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention. In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure.

However, the thin film structure needs to be strong enough to be unaffected by subsequent processes. Compared with BAW-SMR, a smaller part of the membrane type is in contact with the underlying substrate, which is not easy to dissipate heat.

relevant information