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2022-09-24 12:35:29
GS66504B-MR
Manufacturer: GaN Systems
Product Type:MOSFET
RoHS: Details
Technology: GaN-on-Si
Installation style: SMD/SMT
Package/Enclosure: DIE
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - C continuous drain current: 15 A
Rds On - Drain-Source Resistance: 130 mOhms
Vgs - Gate-Source Voltage: - 10 V, + 7 V
Vgs th - gate-source threshold voltage: 1.1 V
Qg - Gate Charge: 3.3 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power consumption:-
Channel Mode:Enhancement
Company Name: GaNPX
Package:Reel
Package:Cut Tape
Package: MouseReel
Brand: GaN Systems
Configuration:Single
Development Kit: GS665MB-EVB, GS-EVB-ACDC-300W-ON
Humidity Sensitive: Yes
Product Type:MOSFET
Series: GS665xx
Original packaging quantity: 250
Subcategory: MOSFETs
Transistor Type: E-HEMT Power Transistor
Part number alias: GS66504B-E01-MR
Weight per piece: 14.594 g