NCE3075Q_NCEP3060EQ Introduction

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

NCE3075Q_NCEP3060EQ

NCE60ND20AK

Why did Felix Zandman name his company Vishay? Because his grandmother was born in Vishay, the name of a small Lithuanian village in honor of family members who were killed in the Holocaust. Felix Zandman wrote in his memoirs , "A lot of people think the name sounds weird, but for me, every time I hear it, I think of my grandmother, the power she gave me and others, the things that were erased forever in Eastern Europe. Jewish community.

For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962. . It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris.

. As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. For these two enhanced MOS tubes, NMOS is more commonly used.

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

NCE3075Q_NCEP3060EQ

NCEP6060GU

The TNPU e3 series devices have a TCR as low as 2 ppm/K, and are available in 0603, 0805, and 1206 frame sizes and from 500 to 20 kΩ.

General Characteristics ● V DS = 30V, ID = 95A R DS(ON) <5.1mΩ@V GS = 10V R DS(ON) <8.5mΩ@V GS = 5V ● High density battery design, ultra-low Rdson ● Fully characterised avalanche Voltage and current ● Good stability and high uniformity? AS ● Excellent package, good heat dissipation.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

The resistors are RoHS compliant, and pure tin plating is compatible with lead (Pb)-free and lead-containing soldering processes. The devices are suitable for automatic SMD assembly system chip processing, and can use automatic wave soldering, reflow soldering or vapor phase reflow soldering.

NCE3075Q_NCEP3060EQ

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

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