NCE30H11K_NCEP3045GU Introduction

The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed. As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed.

Applications for this device include notebook computers, desktop computers, and servers; small high-current power supplies; POL converters; battery-powered equipment; distributed power systems and FPGAs. The inductors released today are ideal for DC/DC converter energy storage below 2 MHz and high current filtering below the inductor self-resonant frequency (SRF).

NCE30H11K_NCEP3045GU

NCE8205A

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

Therefore, in the application of switching power supply and motor drive, NMOS is generally used. The reason is that the on-resistance is small and it is easy to manufacture.

NCE30H11K_NCEP3045GU

NCEP4045GU

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE2012 NCE20H10G NCE20H11 NCE3406N NCE2014ES.

These two factors make Vishay's MELF resistors the choice for high-end audio applications with low noise requirements. Vishay's MELF resistors are produced using an advanced vacuum sputtering process that deposits a layer of a proprietary nickel-chromium alloy of extremely high microstructural quality on a very smooth aluminum substrate in an ultra-high vacuum chamber. This sophisticated internal structure provides the ideal foundation for low-noise performance, which is further enhanced by the cylindrical shape of the resistor. With a 3.14 times larger surface area than flat chip resistors for the same pad size, these devices can produce much higher aspect ratios, resulting in very low field strengths along the resistors. Be aware that the local electric field strength is the main source of current noise. Compared to thick film resistors, this typically provides a spectral density improvement of about -40 dB V/Hz, a figure of about -10 dB V/Hz in the case of thin film resistors, as shown in Figure 2.

NCE30H11K_NCEP3045GU

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

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