NCE3400A_NCEP020N30BQU Introduction

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes. Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first.

NCE3400A_NCEP020N30BQU

NCE1579C

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. In 2004 Fortune Magazine selected Vishay as one of America's more admired companies. Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy.

Therefore, in the application of switching power supply and motor drive, NMOS is generally used. The reason is that the on-resistance is small and it is easy to manufacture.

NCE3400A_NCEP020N30BQU

NCEP12N12AK

. For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

NCE2012 NCE20H10G NCE20H11 NCE3406N NCE2014ES.

General Characteristics ● V DS = 30V, ID = 95A R DS(ON) <5.1mΩ@V GS = 10V R DS(ON) <8.5mΩ@V GS = 5V ● High density battery design, ultra-low Rdson ● Fully characterised avalanche Voltage and current ● Good stability and high uniformity? AS ● Excellent package, good heat dissipation.

NCE3400A_NCEP020N30BQU

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

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