NCE40H30D_NCEP60T15AG Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

NCE40H30D_NCEP60T15AG

NCE1012E

The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

Felix Zandman wrote in his memoir, "Many people think the name sounds odd, but for me, every time I hear it, I think of my grandmother and the power she gave me and others. , think of those Jewish communities in Eastern Europe that were forever erased. Why did Felix Zandman name his company Vishay? Because his grandmother was born in Vishay, the name of a small Lithuanian village in honor of family members killed in the Holocaust ." .

What do the three capacitance parameters represent in the body of the tube? How did it form? . There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

NCE40H30D_NCEP60T15AG

NCEP0140AK

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. . The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons.

NCE40H30D_NCEP60T15AG

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

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