BSS138_NCEP6050AQU Introduction

The power mos used on electric vehicles is a three-dimensional structure. Low-power mos is a planar structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units.

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BSS138_NCEP6050AQU

NCE2012

The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type. .

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

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There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

BSS138_NCEP6050AQU

NCEP25N10AK

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. . Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

Variable resistance area (UDS In this area, when UDS increases, ID increases linearly. When the low UDS splitting and pinch-off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). When the conductive channel is close to the pinch off, the growth slows down. Figure MOS tube drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

BSS138_NCEP6050AQU

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

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