BSS138K_NCEP6060AGU Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed.

BSS138K_NCEP6060AGU

NCE3404Y

What do the three capacitance parameters represent in the body of the tube? How did it form? . There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss.

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy. In 2004 Fortune Magazine selected Vishay as one of America's more admired companies.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

BSS138K_NCEP6060AGU

NCEP095N85AS

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

. For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself.

BSS138K_NCEP6060AGU

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

In the lithium battery protection board, the most important thing is to protect the chip and MOS tube.

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