NCE40H21CD_NCE6060AGU Introduction

There are many well-known brands in the electronics industry, each brand is like a person's name, and its origin and naming have its own unique style. When naming the company, the founders incorporated their nostalgia for the past and expectations for the future. A simple name with many untold stories behind it... . Their success today is due to the founders.

. VentureCraft is a pioneering company in this area, leading the development of high-resolution portable amplifiers, music players and headphone amplifiers, including the popular SounDroid Vantam product line. Although high-resolution technology is only just getting started in the audio market, its evolution is already underway.

NCE40H21CD_NCE6060AGU

NCE3134

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy. In 2004 Fortune Magazine selected Vishay as one of America's more admired companies.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE40H21CD_NCE6060AGU

NCE40P20Q

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE3008M NCE3010S NCE3011E NCE30D0808J NCE3018AS.

When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite. Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance.

Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant. . When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area.

NCE40H21CD_NCE6060AGU

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

The battery cell is equivalent to the heart of the lithium battery, and the lithium battery protection board is mainly composed of a protection chip (or management chip), a MOS tube, a resistor, a capacitor, and a PCB board.

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