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2022-09-23 18:12:25
PMBT2907AMBYL
Manufacturer: Nexperia
Product Type: Bipolar Junction Transistor - BJT
RoHS: Details
Installation style: SMD/SMT
Package/Enclosure: DFN1006-3
Transistor Polarity: PNP
Configuration:Single
Collector-Emitter Maximum Voltage VCEO:- 60 V
Collector-Base Voltage VCBO:- 60 V
Transmitter-Base Voltage VEBO:- 5 V
Collector-Emitter Saturation Voltage:- 1.6 V
Collector maximum DC current: - 600 mA
Pd - Power consumption: 250 mW
Gain Bandwidth Product fT: 210 MHz
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Qualification: AEC-Q101
Package:Reel
Package:Cut Tape
Brand: Nexperia
Continuous Collector Current: - 600 mA
DC collector/gain hfe min: 100
DC maximum gain hFE: 300
Product Type: BJTs - Bipolar Transistors
Original packaging quantity: 10000
Subcategory: Transistors
Technology: Si
Part number alias: 934660372315
Weight per piece: 0.655 mg