2N7002K_NCEP035N72GU Introduction

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first. So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes.

2N7002K_NCEP035N72GU

NCE3413

. For these two enhanced MOS tubes, NMOS is more commonly used. As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

Felix Zandman wrote in his memoir, "Many people think the name sounds odd, but for me, every time I hear it, I think of my grandmother and the power she gave me and others. , think of those Jewish communities in Eastern Europe that were forever erased. Why did Felix Zandman name his company Vishay? Because his grandmother was born in Vishay, the name of a small Lithuanian village in honor of family members killed in the Holocaust ." .

2N7002K_NCEP035N72GU

NCEP075N12D

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

Variable resistance area (UDS In this area, when UDS increases, ID increases linearly. When the low UDS splitting and pinch-off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). When the conductive channel is close to the pinch off, the growth slows down. Figure MOS tube drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant. . When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area.

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

2N7002K_NCEP035N72GU

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

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