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2022-09-23 18:12:25
Shenzhen Yichuanghui Electronics Supply SIR664DP-T1-GE3
Manufacturer: Vishay
Product Category:MOSFET
RoHS: Details
Technology: Si
Installation style: SMD/SMT
Package/Case: PowerPAK-SO-8
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 60 V
Id-Continuous Drain Current: 60 A
Rds On-Drain Source On Resistance: 6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 1.3 V
Qg-gate charge: 26 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 150 C
Pd - Power Dissipation: 50 W
Channel Mode:Enhancement
Brand Name: TrenchFET, PowerPAK
Package:Cut Tape
Package: MouseReel
Package:Reel
Configuration:Single
Series: SIR
Transistor Type: 1 N-Channel
Trademark: Vishay Semiconductors
Forward Transconductance - Min: 70 S
Fall Time: 7 ns
Product Type:MOSFET
Rise time: 12 ns
Factory Packing Quantity: 3000
Subcategory: MOSFETs
Typical turn-off delay time: 24 ns
Typical turn-on delay time: 10 ns
Unit weight: 506.600 mg