LM3150MHX/NOPB_SN74CB3Q3257DBQR Guide

With the advent of 5G networks and next-generation communications technology, many sectors from business to healthcare, agriculture and education will be affected. ?? Once communications infrastructure is in place to support the transfer of large amounts of data, businesses and governments will want to provide wireless coverage for point-to-point connections over the last mile, from objects communicating with each other in warehouses to communicating smartphones, thermostats, Between heart rate monitors and many other devices.

The TI BAW oscillator is an electronic oscillator circuit that utilizes the piezoelectric effect to generate a stable electronic signal through the mechanical resonance of a vibrating miniature acoustic resonator (BAW). This precise high-frequency signal provides a clock and timing reference for electronic systems.

LM3150MHX/NOPB_SN74CB3Q3257DBQR

MAX3243ECRHBR Interface IC

"Quartz crystals require additional components to extend their accuracy -- over time -- as their performance changes beyond controllable temperature changes," he added. In addition, Solis said, "using a BAW resonator is more efficient than using a quartz crystal. precise.

TPS74801DRCR TPS22918DBVR TLV62569ADRLR TLV62569ADRLT TPS61230ARNST.

TPS62823DLCR TPS62823DLCT TPS62821DLCT TPS62821DLCR BQ40Z50RSMR-R2.

In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones.

LM3150MHX/NOPB_SN74CB3Q3257DBQR

GCM31CR70J226ME23D

TPS54310PWPR TPA3116D2DADR LM3429MHX/NOPB DP83867CRRGZT TPS62172DSGR.

In short, advances in BAW technology have brought "higher performance, simpler design, lower cost and smaller size" to wired and wireless networks, Wong explained.

DRV8876NPWPR DRV8872DDARQ1 DRV5013ADQDBZT DRV5013ADQDBZR TPD4E001DRLR.

The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, one layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most waves will The reflected back and the original wave are superimposed. One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer.

LM3150MHX/NOPB_SN74CB3Q3257DBQR

The typical basic structure is shown in the figure (a) above, with the piezoelectric layer sandwiched between the upper and lower metal electrodes, the corresponding mBVD equivalent circuit is shown in the figure (b) above, and the corresponding impedance is shown in the figure (c) above. It can be seen that there are two resonance frequencies, series (fs) and parallel (fp). The working principle is as shown below.

??Membrane Type is etched from the back of the substrate to the surface (that is, the bottom electrode surface) to form a suspended thin film and a cavity. ?? There is also a method called FBAR (Film Bulk Acoustic Resonator), including Membrane type and Airgap type. .

relevant information