NCE6020AK_NCEP080N85K Introduction

As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed.

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

NCE6020AK_NCEP080N85K

NCE6020AL

For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962. .

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

NCE6020AK_NCEP080N85K

NCEP015N30GU

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. . Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

NCE6020AK_NCEP080N85K

. MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package.

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

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