NCE6045G_NCEP048N85D Introduction

A few days ago, Vishay Intertechnology, Inc. announced that it has introduced a temperature coefficient (TCR) as low as 2

New devices in ppm/K, 0603, 0805 and 1206 form factors expand its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors.

Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first. So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes.

NCE6045G_NCEP048N85D

NCE2302C

Felix

Zandman wrote in his memoir, "Many people thought the name sounded odd, but for me, every time I heard it, I thought of my grandmother and the power she gave me and others, Think of those Jewish communities in Eastern Europe that have been erased forever. Why Felix

Zandman named his company Vishay? Because his grandmother was born in Vishay, the name of a small Lithuanian village in honor of family members who were killed in the Holocaust. ".

The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET.

. However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. Working principle of power mos tube

Power MOS tubes are developed from low-power MOS tubes.

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B

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The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

NCE6045G_NCEP048N85D

NCEP068N10K

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

NCE6045G_NCEP048N85D

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U

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NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP

NCE25TD120LP.

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