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2022-09-23 18:12:25
LQH3NPN1R0MGRL
SN74HC74N_LQH3NPN1R0MGRL Introduction
The company currently has two 300mm fabs named RFAB and DMO56. TI outsources much of its logic and embedded IC production to foundries, but mostly produces analog chips in its own factories.
Texas Instruments (TI) said it will close its last two 150mm (6-inch) wafer fabs in the next few years while building its next 300mm (12-inch) fab at its Richardson, Texas, fab. "This will be a multi-year program that is expected to be completed no later than 2023 to 2025," Dave Pahl, head of investor relations at Texas Instruments, said on the conference call.
SN74HC74N_LQH3NPN1R0MGRL
LP38798SD-ADJ/NOPB Regulator IC
TPS61230ARNSR TPS613221ADBVR TPS613221ADBVT LM321LVIDBVR TPS562201DDCR.
In this case, BAW resonator technology offers TI a huge advantage by eliminating the need for external components mounted on the PCB. Today, timing often requires a quartz crystal. "Everyone uses quartz crystals for clocks," Solis said.
In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones.
Ray Upton, TI's vice president of connected microcontrollers, explained that new technologies are critical to "moving large amounts of data in a stable manner," improving high-performance communications. .
SN74HC74N_LQH3NPN1R0MGRL
GCD188R71E273KA01D
In short, advances in BAW technology have brought "higher performance, simpler design, lower cost and smaller size" to wired and wireless networks, Wong explained.
. In order to keep the acoustic wave in the piezoelectric film to oscillate, there must be sufficient isolation between the oscillating structure and the external environment to obtain a small loss and a large Q value. On the other side of the oscillating structure, the acoustic impedance of the piezoelectric material is not much different from that of other substrates (such as Si), so the piezoelectric layer cannot be deposited directly on the Si substrate. The propagation speed of sound waves in solids is ~5000m/s, which means that the acoustic impedance of solids is about 105 times that of air, so 99.995% of the sound wave energy will be reflected back at the boundary between the solid and the air, which is the same as the original wave (incident wave). together to form a standing wave.
UCC28063DR LM536003QDSXRQ1 UCC2892DR MSP430FR2111IPW16R UCC21520QDWRQ1.
LM5176PWPR LM5176PWPT DRV8876PWPR TPS23751PWPR TPS61194PWPR.
SN74HC74N_LQH3NPN1R0MGRL
There are also different structures where sound waves propagate as transverse waves. In the above-mentioned BAW-SMR and FBAR?filter diagrams, sound waves propagate in the form of longitudinal waves, that is, the direction of particle vibration and the direction of wave propagation are parallel.
In the Airgap type, an auxiliary layer (sacrificial support layer) is deposited before the piezoelectric layer is formed, and finally the auxiliary layer is removed to form an air gap under the oscillating structure. ?? Because only the edge part is in contact with the underlying substrate, this structure is relatively fragile when under pressure, and similar to the membrane type, the heat dissipation problem also needs attention.
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