NCE7580_NCEP8816AS Introduction

Today I will introduce to you a domestic FET that is suitable for lithium battery protection boards and can replace MOS tubes such as AO3401: NCE3401.

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NCE7580_NCEP8816AS

NCE2301E

The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type. .

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MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE7580_NCEP8816AS

NCEP068N10K

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE7580_NCEP8816AS

. MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package.

NCE25TD135LP NCE1608N NCE18ND11U NCE3134 NCE20ND07U.

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