BQ24170RGYR

  • 2022-09-23 18:12:25

BQ24170RGYR

BQ34Z100PWR-G1 Other Passive Components_BQ24170RGYR Other Passive Components Guide

Texas Instruments currently has 15 wafer fabs in 9 countries, of course, these plants include outdated capacity that is about to close, as well as new 300mm capacity. In April 2019, Diodes completed the acquisition of Texas Instruments' 150mm/200mm wafer fab (GFAB) in Greenock, Scotland, UK, as part of TI's strategy to gradually abandon outdated capacity.

The BQ25790 and BQ25792 are TI's first multi-cell buck-boost battery chargers with less than 1 µA quiescent current. Combined with the extremely low 8mΩ battery FET resistance, engineers can further extend battery runtime. The quiescent current is reduced by up to ten times with ship mode and shutdown functions, providing battery standby times at least five times higher than the market. .

BQ34Z100PWR-G1 Other passive components_BQ24170RGYR Other passive components

LM4040AIM3-3.0+T Power IC

Thanks to these features and its selectable functions, the TPS62840 helps engineers overcome key design challenges in many battery-operated, continuous-run industrial and personal electronics applications, including narrowband IoT, grid infrastructure equipment, and renewable energy. Wearables, they all require greater flexibility and precision, wider wireless range, and reduced electromagnetic interference (EMI).

The most basic structure of the BAW filter is that two metal electrodes sandwich a piezoelectric film (the thickness of the Quartz substrate is 2um at 2GHz), and the acoustic wave oscillates in the piezoelectric film to form a standing wave.

In this case, BAW resonator technology offers TI a huge advantage by eliminating the need for external components mounted on the PCB. "Everyone uses quartz crystals for clocks," Solis said. Today, timing often requires a quartz crystal.

In order to gain an in-depth understanding of TI's new breakthrough in BAW technology, let's start with the principle of BAW filter: . For the first time in the industry, TI uses this technology for integrated clock functions. • In the past, BAW resonator technology has been used to filter signals in communication technologies such as smartphones.

BQ34Z100PWR-G1 Other passive components_BQ24170RGYR Other passive components

BQ7790502PWR Other ICs

TPS63060DSCR TPS63030DSKR TPS63060DSCT TPS63070RNMR TPS630701RNMR.

In short, advances in BAW technology have brought "higher performance, simpler design, lower cost and smaller size" to wired and wireless networks, Wong explained.

The technology, which also enables high-precision and robust communication between IoT devices, can now be developed in a less bulky form, said Kim Wong, vice president of high-speed data and clocking at TI.

One way is to form a Bragg reflector under the oscillating structure to reflect sound waves into the piezoelectric layer. The overall effect of this structure is equivalent to contact with air, and most of the sound waves are reflected back. This structure is called BAW-SMR (Solidly Mounted Resonator), as shown below. The reflector consists of several layers of alternating high and low impedance layers. For example, the first layer has a large acoustic wave impedance, the second layer has a small acoustic wave impedance, and the third layer has a large acoustic wave impedance, and the thickness of each layer is λ/4 of the acoustic wave, so that most of the wave will be reflected back and superimposed with the original wave.

BQ34Z100PWR-G1 Other passive components_BQ24170RGYR Other passive components

TI's newest SimpleLink™ multi-standard MCU with ?BAW technology can be integrated into low-power wireless RF devices, such as low-power crystalless Bluetooth and Zigbee? technology, thereby reducing wireless RF failures caused by external crystals.

Quartz (quartz), as a common piezoelectric material, exhibits linear response under high voltage and high pressure, but there is no suitable method to make quartz into thin film deposits on Si substrates. A suitable BAW piezoelectric material needs high electromechanical coupling coefficient, low electromechanical loss, high thermal stability, and also conforms to IC process technology.

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