NCE0130_NCEP01T30T Introduction

As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed.

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

NCE0130_NCEP01T30T

NCE3080L

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

. For these two enhanced MOS tubes, NMOS is more commonly used. As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962. .

NCE0130_NCEP01T30T

NCEP15T14D

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE0130_NCEP01T30T

The functions of the MOS tube in the protection board are: 1. Detect overcharge, 2. Detect over-discharge, 3. Detect over-current during charging, 4. Detect over-current during discharge, 5. Detect over-current during short circuit.

The main functions of the lithium battery protection board are: 1 overcharge protection, 2 short circuit protection, 3 over current protection, 4 over discharge protection, 5 normal state.

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