NCE01H21TC_NCEP0120Q Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

NCE01H21TC_NCEP0120Q

NCE8290

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

What do the three capacitance parameters represent in the body of the tube? How did it form? . There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss.

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NCE01H21TC_NCEP0120Q

NCEP053N85GU

The N-channel enhancement mode MOS transistor uses a low-doped P-type semiconductor as the substrate, and forms two heavily doped N+ regions on the substrate by a dispersed method, and then generates a very thin one on the P-type semiconductor. A silicon dioxide insulating layer, and then photolithography is used to etch away the silicon dioxide layer on the upper end of the two heavily doped N+ regions, exposing the N+ regions, and finally on the outer surface of the two N+ regions and the two between them. The surface of silicon oxide is sprayed with a layer of metal film by evaporation or sputtering. These three metal films constitute the three electrodes of the MOS tube, which are called source (S), gate (G) and drain (D) respectively. .

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. . Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE01H21TC_NCEP0120Q

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

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