NCE01H29TC_NCEP0140AD Introduction

As the switch tube of the driving part, the main focus of the MOS tube is the withstand voltage, current withstand value and switching speed. The MOS tube is a voltage-driven device. As long as an appropriate voltage is applied between the gate G and the source S, the conduction path between the source S and D will be formed.

Their various switching actions are almost the same. Of course, when they burn out, there must be a small tube that can't bear it first. So the stability of the tube is inseparable from the manufacturing process, and poor workmanship may result in the inconsistency of the parameters of these small tubes.

NCE01H29TC_NCEP0140AD

NCE30H14K

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

. For these two enhanced MOS tubes, NMOS is more commonly used. As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

NCE01H29TC_NCEP0140AD

NCE55P15K

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. . The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE01H29TC_NCEP0140AD

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

relevant information