NCE1583T_NCEP025N12LL Introduction

The above is the specification of the power mos tube NCE80H12. The power mos tube NCE80H12 used in our electric vehicle controller is actually different from the low-power mos structure in the usual cmos integrated circuit.

A MOS tube is a semiconductor device in which unipolar carriers participate in conduction. According to the carrier of the conduction channel, it can be divided into N channel and P channel. Assuming that the carriers of the conductive channel are electrons, it is called an N-channel; assuming that the carriers are holes, it is called a P-channel.

NCE1583T_NCEP025N12LL

NCE6080D

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

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The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

What do the three capacitance parameters represent in the body of the tube? How did it form? . There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss.

NCE1583T_NCEP025N12LL

NCEP018N30GU

. For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. .

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

NCE1583T_NCEP025N12LL

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

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