NCE15H10_NCEP028N12LL Introduction

The power mos used on electric vehicles is a three-dimensional structure. Low-power mos is a planar structure. The mos tube we have seen is actually composed of thousands of small mos tubes in parallel. You may think that one or a few bad moss should easily appear in thousands of small mos. In fact, it is not that easy. , the current manufacturing process basically guarantees the high consistency of various parameters of these small units.

The smaller the internal resistance, the larger the current (because the heat is small). The resistance of this current path is called the internal resistance of the MOS tube, that is, the on-resistance. The size of this internal resistance basically determines how much on-current the MOS tube chip can withstand (of course, it is related to other factors, such as thermal resistance).

NCE15H10_NCEP028N12LL

NCE0130

MOS tube 3306 product features 1. RDS(on)=7mΩ@VGS=10V 2. Lead-free green equipment 3. Low resistance switch to reduce conduction loss 4. High avalanche current.

Figure four types of MOSFETs and their graphical symbols. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. .

NCE3019AS NCE3045G NCE3400AY NCE30ND07S NCE8601B.

The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

NCE15H10_NCEP028N12LL

NCEP1520G

. For example, electronic fuel injection system, anti-lock brake control, anti-skid control, traction control, electronically controlled suspension, electronically controlled automatic transmission, electronic power steering, etc. The electronic device that can be used independently in the environment has no direct relationship with the performance of the car itself.

NCE3075Q NCE3015S NCE3400E NCE3065K NCE3095AK.

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

NCE15H10_NCEP028N12LL

The performance parameters of NCE3401 are still good, suitable for load switching or pulse width modulation applications, and the impedance value is relatively low, and the new clean energy MOS tube has the characteristic process technology of shielded gate power and super junction power MOSFET. The parameter performance and sample delivery performance can be almost the same as foreign MOS tubes, such as the same used in lithium battery protection boards, NCE3401, AO3401, IRLML5203TR, DMP3098L-7, I think the functions can be satisfied in comparison, and the price is moderate NCE3401 is more suitable.

NCE30TD120UT NCE40TD120UT NCE40TD120VT NCE30TD120BP NCE25TD120BT.

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