NCE1810AK_NCEP045N12GU Introduction

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

In response to this demand, Xinjie can produce N-channel trench process MOS transistors with small internal resistance and good overcurrent resistance - NCE80H12, the on-resistance of NCE80H12 is less than 6mΩ, the output current can reach 120A, and the motor torque is better , .

NCE1810AK_NCEP045N12GU

NCE01H14T

Figure four types of MOSFETs and their graphical symbols. According to the two points of the conductive channel and the process of channel formation, MOS tubes can be divided into: P-channel enhancement MOS tubes, P-channel depletion MOS tubes, N-channel enhancement MOS tubes and N-channel depletion MOS tubes . Power MOSFETs are generally rarely used in P-channel. Since the mobility of holes is lower than that of electrons, the on-resistance of P-channel transistors is larger than that of N-channel transistors for the same channel size. .

NCE3404Y NCE3400A NCE3400 NCE30ND07AS NCE3008N.

What do the three capacitance parameters represent in the body of the tube? How did it form? . There are three parasitic capacitance parameters in the MOS tube specification, namely: input capacitance Ciss, output capacitance Coss, and reverse transfer capacitance Crss.

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

NCE1810AK_NCEP045N12GU

NCEP85T14

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

Power MOSFETs are used in power conversions such as switching power supplies and inverters, and they work in two regions, the cut-off region and the breakdown region. The breakdown region is in the region of considerable drain-source voltage UDS, and the drain current is approximately constant. . When the UDS increases to a certain value, the drain PN junction breaks down, the leakage current increases rapidly, and the curve turns upward and enters the breakdown region. The full area (UDS>UGS-UT) guarded in the above three areas is the full area, also known as the constant current area or the amplification area.

When the applied forward voltage increases, the concentration of unbalanced minority carriers increases and the concentration gradient also increases, and when the applied voltage decreases, the change is opposite. Diffusion capacitance: When a forward voltage is applied, the non-equilibrium minority carrier concentration near the interface of the depletion layer is high, far from the non-equilibrium minority carrier concentration is low, and the concentration gradually decays from high to 0 until it reaches zero. The process of charge accumulation and release in this phenomenon is the same as that of capacitor charging and discharging, which is called diffusion capacitance.

NCE1810AK_NCEP045N12GU

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

NCE2302D NCE2302F NCE1012E NCE2302B NCE2302.

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