IPG20N06S4L-26

Product attribute attribute value search similar

Manufacturer: Infineon

Product Category:MOSFET

Technology: Si

Installation style: SMD/SMT

Package / Box: TDSON-8

Transistor Polarity: N-Channel

Number of channels: 2 Channel

Vds-drain-source breakdown voltage: 60 V

Id-Continuous Drain Current: 20 A

Rds On-Drain Source On Resistance: 21 mOhms, 21 mOhms

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Vgs th - gate-source threshold voltage: 1.2 V

Qg-gate charge: 20 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 175 C

Pd - Power Dissipation: 33 W

Channel Mode:Enhancement

Qualification: AEC-Q101

Brand Name: OptiMOS

Package:Reel

Package:Cut Tape

Package: MouseReel

Trademark: Infineon Technologies

Configuration: Dual

Fall Time: 10 ns, 10 ns

Height: 1.27 mm

Length: 5.9 mm

Product Type:MOSFET

Rise time: 1.5 ns, 1.5 ns

Series: OptiMOS-T2

Factory Packing Quantity: 5000

Subcategory: MOSFETs

Transistor Type: 2 N-Channel

Typical turn-off delay time: 18 ns, 18 ns

Typical turn-on delay time: 5 ns, 5 ns

Width: 5.15 mm

Part number alias: IPG2N6S4L26XT SP000705588 IPG20N06S4L26ATMA1

Unit weight: 96.440 mg

Search