NCE0275_NCEP1278 Introduction

MOS tubes like NCE80H12 convert the DC power in the battery into AC power when the electric vehicle is running normally, thereby driving the motor to run.

In simple terms, the motor is driven by the output current of the MOS tube such as NCE80H12. The larger the output current (in order to prevent overcurrent from burning the MOS tube, the controller has limited current protection), the motor torque is strong and the acceleration is powerful, so MOS Tubes play a very important role in electric vehicle controllers.

NCE0275_NCEP1278

NCE30P25Q

. For these two enhanced MOS tubes, NMOS is more commonly used. As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

. Today the physics book written by Dr. Felix Zandman is used as a basic textbook in many universities, and his autobiography has been translated into Chinese and many other languages. Felix Zandman experienced the Holocaust, lost loved ones, and lived in the dark underground for 17 months in the haze of death. The component industry and even the history of technological development have left a strong legacy. In 2004 Fortune Magazine selected Vishay as one of America's more admired companies.

Barrier capacitance: In power semiconductors, when the N-type and P-type semiconductors are combined, the electrons of the N-type semiconductor will partially diffuse into the holes of the P-type semiconductor due to the concentration difference, so they will form on both sides of the junction surface. Space charge area (the electric field formed by the space charge area will resist the diffusion movement, and finally make the diffusion movement reach equilibrium);

NCE0275_NCEP1278

NCEP4060EQ

On the one hand, the three electrodes of the low-power MOSFET are on one plane, the channel cannot be made very short, and the channel resistance is large. On the other hand, the conductive channel is composed of surface induced charges, and the channel current is the surface current. To increase the current capacity, it is necessary to increase the chip area. Such a structure is unlikely to achieve a large current. . The structure of the MOSFET shown in the figure is not suitable for use in high-power applications for two reasons.

. The parasitic capacitance structure of the MOS tube is as follows. Among them, the width of polysilicon, the width of the channel and the trench, the thickness of the G oxide layer, and the doping profile of the PN junction are all factors that affect the parasitic capacitance.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

Another technique is to intermittently improve the structure of the MOSFET and use a straight V-groove structure. FIG. 3 is a cross-sectional view of the structure of a V-channel MOSFET. In order to avoid the problems of too small current-carrying capacity and large on-resistance of MOSFET, two techniques are generally used in high-power MOSFETs. One is to connect millions of low-power MOSFET unit cells in parallel to improve the current-carrying capacity of MOSFET. .

NCE0275_NCEP1278

NCE8205B NCE8205 NCE8205i NCE8205E NCE9926.

NCE25TD120WT NCE25TD120VT NCE15TD120LT NCE25TD120LT NCE40TD135LT.

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