NCE3139_NCEP15T11JD Introduction

In addition to the above-mentioned NCE80H12 suitable for electric vehicle controllers, Nanshan Electronics also provides Fenghua resistance-capacitance sense, long-crystal MOS transistors, Epson active and passive crystal oscillators, etc.

A few days ago, Vishay Intertechnology, Inc. announced that it has expanded its TNPU e3 series of automotive-grade high-precision thin-film flat chip resistors with new devices with a temperature coefficient (TCR) as low as 2 ppm/K, in 0603, 0805 and 1206 form factors.

NCE3139_NCEP15T11JD

NCE2305

The conductive channel of the MOS tube can be formed during the production process or by turning on an external power supply. When the gate voltage is equal to zero, there is a channel (that is, formed during production), which is called depletion mode. When an external voltage is applied The one that forms the channel later is called the enhancement type. .

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE2025I NCE2025S NCE2030K NCE2030U NCE2030.

The following describes the principle of the MOS transistor with the structure of an N-channel enhancement type low-power MOSFET. . However, in terms of structure, there is a big difference between them. In order to better understand the mechanism of power MOSFET, we must first recall the mechanism of low-power FET. Working principle of power MOS tube Power MOS tube is developed from low-power MOS tube.

NCE3139_NCEP15T11JD

NCEP40T17G

MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two.

Variable resistance area (UDS In this area, when UDS increases, ID increases linearly. When the low UDS splitting and pinch-off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). When the conductive channel is close to the pinch off, the growth slows down. Figure MOS tube drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

NCE3020K NCE3025Q NCE3035K NCE3025G NCE3030K.

The characteristics of a MOSFET can be characterized by a transfer characteristic curve and a drain output characteristic curve. . Figure 3 shows the handling characteristics of a certain FET. The transfer characteristic refers to the relationship curve between the gate voltage UGS and the corresponding drain current ID when the voltage UDS between the drain and the source is at a certain fixed value.

NCE3139_NCEP15T11JD

The lithium battery is mainly composed of two blocks, the battery cell and the lithium battery protection board PCM.

NCE20ND06 NCE2008N NCE2312 NCE2312A NCE8205A.

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