NCE3415Y_NCEP1560 Introduction

Xinjie, behind this FET NCE80H12, utilizes its own technical advantages to work closely with 8-inch wafer foundries, packaging and testing foundries, and has a complete quality management system to ensure continuous product quality and stable supply.

There are many well-known brands in the electronics industry, each brand is like a person's name, and its origin and naming have its own unique style. When naming the company, the founders incorporated their nostalgia for the past and expectations for the future. A simple name with many untold stories behind it... . Their success today is due to the founders.

NCE3415Y_NCEP1560

NCE0110AK

NCE30H11K NCE3402B NCE30H10AK NCE2304 NCE3404.

For 17 months without the light of day, Zandman's uncle taught him algebra, trigonometry, geometry and physics. It can be said that what Zandman learned during those darker days laid the groundwork for him to start Vishay. After the war, Zandman immigrated to France, earning degrees in Mechanical Engineering, Applied Mechanics and General Physics, and a Ph.D. in Mechanical Physics at the Sorbonne University in Paris. Zandman was born in Poland in 1928. During the Nazi Holocaust in World War II, Zandman was taken in by an old housekeeper whom Zandman's grandmother had rescued. He and four others hid under the housekeeper's floor for 17 months before they were able to escape the Holocaust. . In 1956, Zandman immigrated to the United States and founded Vishay in 1962. .

The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used.

There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process.

NCE3415Y_NCEP1560

NCE01P30K

NCE6802 NCE30H29D NCEB301Q NCEB301Q NCEB301G.

NCE2060K NCE2090K NCE20H11K NCE20H18 NCE20H20.

NCE4612SP NCE30H32VD NCE3402 NCE3402A NCE30H21.

Variable resistance area (UDS In this area, when UDS increases, ID increases linearly. When the low UDS splitting and pinch-off voltage is large, the MOS tube is equivalent to a resistance, and this resistance decreases with the increase of UGS. Cut-off area (UGS). When the conductive channel is close to the pinch off, the growth slows down. Figure MOS tube drain output characteristics The output characteristics of field effect transistors can be divided into four regions: variable resistance region, cut-off region, breakdown region and constant current zone.

NCE3415Y_NCEP1560

. MOS tube NCE3401 is a -30V drain-source voltage, 4.2A current, P-channel MOS tube in SOT-23 package.

NCE25TD135LT NCE15TD135LT NCE15TD120LP NCE15TD135LP NCE25TD120LP.

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